onsemi NVTFS6H854N Type N-Channel MOSFET, 44 A, 80 V Enhancement, 8-Pin WDFN NVTFS6H854NTAG
- RS Stock No.:
- 185-9264
- Mfr. Part No.:
- NVTFS6H854NTAG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP450.80
(exc. VAT)
PHP504.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 1,470 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP45.08 | PHP450.80 |
| 100 - 990 | PHP43.728 | PHP437.28 |
| 1000 - 4990 | PHP41.105 | PHP411.05 |
| 5000 - 9990 | PHP37.405 | PHP374.05 |
| 10000 + | PHP32.916 | PHP329.16 |
*price indicative
- RS Stock No.:
- 185-9264
- Mfr. Part No.:
- NVTFS6H854NTAG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVTFS6H854N | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.15 mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Length | 3.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVTFS6H854N | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 3.15 mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Length 3.15mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (3.3 x 3.3 mm)
Low On-Resistance
Low Capacitance
NVTFS6H850NWF − Wettable Flanks Product
PPAP Capable
Compact Design
Minimizes Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Suitable for Automotive Applications
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
End Products
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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