DiodesZetex DMTH6016LK3 Type N-Channel MOSFET, 46.9 A, 60 V Enhancement, 4-Pin TO-252 DMTH6016LK3-13
- RS Stock No.:
- 182-7269
- Mfr. Part No.:
- DMTH6016LK3-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
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Subtotal (1 pack of 25 units)*
PHP592.90
(exc. VAT)
PHP664.05
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,250 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 225 | PHP23.716 | PHP592.90 |
| 250 - 475 | PHP23.123 | PHP578.08 |
| 500 - 975 | PHP22.545 | PHP563.63 |
| 1000 - 1475 | PHP21.982 | PHP549.55 |
| 1500 + | PHP21.432 | PHP535.80 |
*price indicative
- RS Stock No.:
- 182-7269
- Mfr. Part No.:
- DMTH6016LK3-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMTH6016LK3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 60W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Width | 6.2 mm | |
| Height | 2.26mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMTH6016LK3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 60W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Width 6.2 mm | ||
Height 2.26mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Rated to +175°C – Ideal for High Ambient Temperature
Environments
Low RDS(ON) – Ensures On State Losses Are Minimized
Excellent Qgd x RDS(ON) Product (FOM)
Lead-free finish
Halogen and Antimony Free. “Green” Device.
Power Management Functions
DC-DC Converters
Backlighting
Related links
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