Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

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Subtotal (1 tube of 50 units)*

PHP5,000.80

(exc. VAT)

PHP5,600.90

(inc. VAT)

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  • Shipping from March 13, 2026
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Units
Per Unit
Per Tube*
50 - 50PHP100.016PHP5,000.80
100 - 450PHP97.015PHP4,850.75
500 - 950PHP91.195PHP4,559.75
1000 - 1950PHP82.987PHP4,149.35
2000 +PHP73.029PHP3,651.45

*price indicative

RS Stock No.:
180-8316
Mfr. Part No.:
IRFBE30LPBF
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.8V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay IRFBE30L is a N-channel power MOSFET having drain to source(Vds) voltage of 800V.The gate to source voltage(VGS) is 20V. It is having I2PAK (TO-262) and D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 3ohms at 10VGS. Maximum drain current 4.1 A.

Dynamic dV/dt rating

Repetitive avalanche rated

Fast switching

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