MPN

Vishay Single 1 Type N-Channel Power MOSFET, 5.2 A, 200 V TO-263 IRF620SPBF

RS Stock No.:: 180-8301
Mfr. Part No.:: IRF620SPBF
Manufacturer:: Vishay

Vishay Single 1 Type N-Channel Power MOSFET, 5.2 A, 200 V TO-263 IRF620SPBF

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

PHP3,818.45

(exc. VAT)

PHP4,276.65

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

700 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tube*
50 - 50	PHP76.369	PHP3,818.45
100 - 450	PHP74.078	PHP3,703.90
500 - 950	PHP69.633	PHP3,481.65
1000 - 1950	PHP63.366	PHP3,168.30
2000 +	PHP55.762	PHP2,788.10

*price indicative

RS Stock No.:: 180-8301
Mfr. Part No.:: IRF620SPBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-263
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	0.8Ω
	Typical Gate Charge Qg @ Vgs	14nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	50W
	Maximum Gate Source Voltage Vgs	±20 V
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-263
	Mount Type Surface
	Maximum Drain Source Resistance Rds 0.8Ω
	Typical Gate Charge Qg @ Vgs 14nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 50W
	Maximum Gate Source Voltage Vgs ±20 V
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

The Vishay IRF620S is a N-channel power MOSFET having drain to source(Vds) voltage of 200V.The gate to source voltage(VGS) is 20V. It is having D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 0.8ohms at 10VGS. Maximum drain current 5.2A.

Surface mount

Available in tape and reel

Dynamic dv/dt rating

Vishay Single 1 Type N-Channel Power MOSFET, 5.2 A, 200 V TO-263 IRF620SPBF

FREE delivery for orders over ₱3,000.00

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