Dual N-Channel MOSFET, 52 A, 40 V, 8-Pin DFN onsemi NVMFD5C466NLWFT1G
- RS Stock No.:
- 172-3406
- Mfr. Part No.:
- NVMFD5C466NLWFT1G
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 25 units)**
PHP2,430.40
(exc. VAT)
PHP2,722.05
(inc. VAT)
Temporarily out of stock - back order for despatch 10/07/2025, delivery within 10 working days from desptach date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
25 - 25 | PHP97.216 | PHP2,430.40 |
50 - 75 | PHP89.063 | PHP2,226.575 |
100 - 225 | PHP82.26 | PHP2,056.50 |
250 - 475 | PHP76.364 | PHP1,909.10 |
500 + | PHP73.227 | PHP1,830.675 |
**price indicative
- RS Stock No.:
- 172-3406
- Mfr. Part No.:
- NVMFD5C466NLWFT1G
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 52 A | |
Maximum Drain Source Voltage | 40 V | |
Series | NVMFD5C466NL | |
Package Type | DFN | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 12.6 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 40 W | |
Maximum Gate Source Voltage | ±20 V | |
Maximum Operating Temperature | +175 °C | |
Length | 6.1mm | |
Typical Gate Charge @ Vgs | 16 nC @ 10 V | |
Number of Elements per Chip | 2 | |
Width | 5.1mm | |
Height | 1.05mm | |
Minimum Operating Temperature | -55 °C | |
Automotive Standard | AEC-Q101 | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 40 V | ||
Series NVMFD5C466NL | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 40 W | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 6.1mm | ||
Typical Gate Charge @ Vgs 16 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Width 5.1mm | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
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