Name: Toshiba N-Channel MOSFET, 15.8 A, 600 V, 5-Pin DFN TK16V60W
Brand: Toshiba
SKU: 171-2512P
Price: 144.65 PHP
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	15.8 A
	Maximum Drain Source Voltage	600 V
	Package Type	DFN
	Mounting Type	Surface Mount
	Pin Count	5
	Maximum Drain Source Resistance	190 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.7V
	Minimum Gate Threshold Voltage	2.7V
	Maximum Power Dissipation	139 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±30 V
	Maximum Operating Temperature	+150 °C
	Width	8mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	38 nC @ 10 V
	Length	8mm
	Height	0.85mm
	Forward Diode Voltage	1.7V

	Select all
	Brand Toshiba
	Channel Type N
	Maximum Continuous Drain Current 15.8 A
	Maximum Drain Source Voltage 600 V
	Package Type DFN
	Mounting Type Surface Mount
	Pin Count 5
	Maximum Drain Source Resistance 190 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.7V
	Minimum Gate Threshold Voltage 2.7V
	Maximum Power Dissipation 139 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±30 V
	Maximum Operating Temperature +150 °C
	Width 8mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 38 nC @ 10 V
	Length 8mm
	Height 0.85mm
	Forward Diode Voltage 1.7V

RoHS Status: Not Applicable

COO (Country of Origin):: CN

Applications
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.)
by used to Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)