Infineon BSC040N08NS5 Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC040N08NS5ATMA1
- RS Stock No.:
- 171-1969
- Mfr. Part No.:
- BSC040N08NS5ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP944.72
(exc. VAT)
PHP1,058.09
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,410 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP94.472 | PHP944.72 |
| 100 - 490 | PHP92.11 | PHP921.10 |
| 500 - 990 | PHP89.808 | PHP898.08 |
| 1000 - 2490 | PHP87.563 | PHP875.63 |
| 2500 + | PHP85.374 | PHP853.74 |
*price indicative
- RS Stock No.:
- 171-1969
- Mfr. Part No.:
- BSC040N08NS5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | BSC040N08NS5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Forward Voltage Vf | 0.88V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series BSC040N08NS5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Forward Voltage Vf 0.88V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BSC040N08NS5 OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Related links
- Infineon BSC040N08NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon BSC030N08NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon BSC030N08NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC030N08NS5ATMA1
- Infineon IAUC Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON IAUC100N08S5N031ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC047N08NS3GATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON