- RS Stock No.:
- 168-4740
- Mfr. Part No.:
- IXFQ50N50P3
- Manufacturer:
- IXYS
Available for back order.
Added
Price Each (In a Tube of 30)
PHP384.83
(exc. VAT)
PHP431.01
(inc. VAT)
Units | Per Unit | Per Tube* |
30 + | PHP384.83 | PHP11,544.90 |
*price indicative |
- RS Stock No.:
- 168-4740
- Mfr. Part No.:
- IXFQ50N50P3
- Manufacturer:
- IXYS
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 50 A |
Maximum Drain Source Voltage | 500 V |
Series | HiperFET, Polar3 |
Package Type | TO-3P |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 125 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 960 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |
Length | 15.8mm |
Width | 4.9mm |
Height | 20.3mm |
Minimum Operating Temperature | -55 °C |