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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	11.6 A
	Maximum Drain Source Voltage	30 V
	Series	PowerTrench
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	10 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	23 nC @ 10 V
	Length	5mm
	Width	4mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 11.6 A
	Maximum Drain Source Voltage 30 V
	Series PowerTrench
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 10 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 23 nC @ 10 V
	Length 5mm
	Width 4mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 1.5mm

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench N-Channel MOSFET, 11.6 A, 30 V, 8-Pin SOIC FDS8880

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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