- RS Stock No.:
- 159-6516
- Mfr. Part No.:
- IRFP460BPBF
- Manufacturer:
- Vishay
375 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (In a Tube of 25)
PHP137.88
(exc. VAT)
PHP154.43
(inc. VAT)
Units | Per Unit | Per Tube* |
25 - 100 | PHP137.88 | PHP3,447.00 |
125 + | PHP113.475 | PHP2,836.875 |
*price indicative |
- RS Stock No.:
- 159-6516
- Mfr. Part No.:
- IRFP460BPBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
Vishay D Series Power MOSFETs
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 500 V |
Series | D Series |
Package Type | TO-247AC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 250 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 278 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 5.31mm |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |
Length | 15.87mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 20.82mm |