- RS Stock No.:
- 159-6516
- Mfr. Part No.:
- IRFP460BPBF
- Manufacturer:
- Vishay
This image is representative of the product range
View all MOSFETs
375 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Price Each (In a Tube of 25)
PHP207.203
(exc. VAT)
PHP232.067
(inc. VAT)
units | Per Unit | Per Tube* |
25 - 100 | PHP207.203 | PHP5,180.075 |
125 + | PHP170.528 | PHP4,263.20 |
*price indicative |
- RS Stock No.:
- 159-6516
- Mfr. Part No.:
- IRFP460BPBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
Vishay D Series Power MOSFETs
FEATURES
Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
APPLICATIONS
Consumer Electronics
- Displays (LCD or Plasma TV)
Server and Telecom Power Supplies
- SMPS
Industrial
- Welding
- Induction Heating
- Motor Drives
Battery Chargers
SMPS
- Power Factor Correction (PFC)
Consumer Electronics
- Displays (LCD or Plasma TV)
Server and Telecom Power Supplies
- SMPS
Industrial
- Welding
- Induction Heating
- Motor Drives
Battery Chargers
SMPS
- Power Factor Correction (PFC)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO-247AC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 250 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 278 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 15.87mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Width | 5.31mm |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |
Height | 20.82mm |
Series | D Series |
Minimum Operating Temperature | -55 °C |