Nexperia BUK9Y7R640E Type N-Channel MOSFET, 79 A, 40 V Enhancement, 5-Pin LFPAK BUK9Y7R6-40E,115
- RS Stock No.:
- 153-2862
- Mfr. Part No.:
- BUK9Y7R6-40E,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP1,251.65
(exc. VAT)
PHP1,401.85
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 03, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 100 | PHP50.066 | PHP1,251.65 |
| 125 - 225 | PHP48.564 | PHP1,214.10 |
| 250 - 600 | PHP47.107 | PHP1,177.68 |
| 625 - 1225 | PHP45.694 | PHP1,142.35 |
| 1250 + | PHP44.323 | PHP1,108.08 |
*price indicative
- RS Stock No.:
- 153-2862
- Mfr. Part No.:
- BUK9Y7R6-40E,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BUK9Y7R640E | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 15.28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 95W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.1 mm | |
| Length | 5mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BUK9Y7R640E | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 15.28mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 95W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.1 mm | ||
Length 5mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56, Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
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