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Nexperia Type N-Channel MOSFET, 4.1 A, 80 V Enhancement, 8-Pin DFN

RS Stock No.:: 151-3030
Mfr. Part No.:: PMPB95ENEAX
Manufacturer:: Nexperia

Nexperia Type N-Channel MOSFET, 4.1 A, 80 V Enhancement, 8-Pin DFN

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)*

PHP41,349.00

(exc. VAT)

PHP46,311.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

3,000 unit(s) shipping from April 22, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
3000 - 3000	PHP13.783	PHP41,349.00
6000 - 12000	PHP13.175	PHP39,525.00
15000 +	PHP12.799	PHP38,397.00

*price indicative

RS Stock No.:: 151-3030
Mfr. Part No.:: PMPB95ENEAX
Manufacturer:: Nexperia

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	80V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	202mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.9nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	15.6W
	Maximum Operating Temperature	150°C
	Width	2.1 mm
	Length	2.1mm
	Height	0.65mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 80V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 202mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.9nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 15.6W
	Maximum Operating Temperature 150°C
	Width 2.1 mm
	Length 2.1mm
	Height 0.65mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Exposed drain pad for excellent thermal conduction

Tin-plated 100 % solderable side pads for optical solder inspection

AEC-Q101 qualified

Nexperia Type N-Channel MOSFET, 4.1 A, 80 V Enhancement, 8-Pin DFN

FREE delivery for orders over ₱3,000.00

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