ROHM SCT3022AL Type N-Channel MOSFET, 93 A, 650 V Enhancement, 3-Pin TO-247 SCT3022ALGC11
- RS Stock No.:
- 150-1518
- Mfr. Part No.:
- SCT3022ALGC11
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 unit)*
PHP3,074.02
(exc. VAT)
PHP3,442.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 1 | PHP3,074.02 |
| 2 - 4 | PHP3,045.70 |
| 5 - 9 | PHP3,005.99 |
| 10 - 49 | PHP2,967.31 |
| 50 + | PHP2,929.59 |
*price indicative
- RS Stock No.:
- 150-1518
- Mfr. Part No.:
- SCT3022ALGC11
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 93A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCT3022AL | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 133nC | |
| Maximum Power Dissipation Pd | 262W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 21mm | |
| Length | 16mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 93A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCT3022AL | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 133nC | ||
Maximum Power Dissipation Pd 262W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Height 21mm | ||
Length 16mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Automotive Standard No | ||
Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant
Related links
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IMW65R015M2HXKSA1
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247 IRFP4768PBF
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247
- Toshiba Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOP TPH4R50ANH
- Toshiba Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOP
- onsemi NTMFS006N Type N-Channel MOSFET 120 V Enhancement, 5-Pin DFN
- onsemi NTMFS006N Type N-Channel MOSFET 120 V Enhancement, 5-Pin DFN NTMFS006N12MCT1G
- IXYS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247