SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM SCT3120ALGC11

RS Stock No.:: 150-1488
Mfr. Part No.:: SCT3120ALGC11
Manufacturer:: ROHM

SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM SCT3120ALGC11

41 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

Price Each

PHP463.06

(exc. VAT)

PHP518.63

(inc. VAT)

Units	Per Unit
1 - 1	PHP463.06
2 - 4	PHP449.16
5 - 9	PHP435.68
10 - 49	PHP422.60
50 +	PHP409.92

RS Stock No.:: 150-1488
Mfr. Part No.:: SCT3120ALGC11
Manufacturer:: ROHM

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	21 A
Maximum Drain Source Voltage	650 V
Package Type	TO-247N
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	158.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5.6V
Minimum Gate Threshold Voltage	2.7V
Maximum Power Dissipation	103 W
Transistor Configuration	Single
Maximum Gate Source Voltage	22 V
Typical Gate Charge @ Vgs	38 nC @ 18 V
Length	16mm
Transistor Material	SiC
Maximum Operating Temperature	+175 °C
Width	5mm
Number of Elements per Chip	1
Height	21mm