SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM SCT3120ALGC11
- RS Stock No.:
- 150-1488
- Mfr. Part No.:
- SCT3120ALGC11
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 unit)**
PHP427.84
(exc. VAT)
PHP479.18
(inc. VAT)
39 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit |
|---|---|
| 1 - 1 | PHP427.84 |
| 2 - 4 | PHP415.00 |
| 5 - 9 | PHP402.55 |
| 10 - 49 | PHP390.46 |
| 50 + | PHP378.75 |
**price indicative
- RS Stock No.:
- 150-1488
- Mfr. Part No.:
- SCT3120ALGC11
- Manufacturer:
- ROHM
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247N | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 158.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.6V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 103 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 22 V | |
| Typical Gate Charge @ Vgs | 38 nC @ 18 V | |
| Transistor Material | SiC | |
| Length | 16mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 5mm | |
| Number of Elements per Chip | 1 | |
| Height | 21mm | |
Select all | ||
|---|---|---|
Manufacturer ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247N | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 158.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.6V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 103 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 22 V | ||
Typical Gate Charge @ Vgs 38 nC @ 18 V | ||
Transistor Material SiC | ||
Length 16mm | ||
Maximum Operating Temperature +175 °C | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Height 21mm | ||
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