N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 IXYS IXFH60N65X2
- RS Stock No.:
- 146-4234
- Mfr. Part No.:
- IXFH60N65X2
- Brand:
- IXYS
30 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (In a Tube of 30)
PHP475.121
(exc. VAT)
PHP532.136
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 90 | PHP475.121 | PHP14,253.63 |
| 120 - 270 | PHP460.867 | PHP13,826.01 |
| 300 - 570 | PHP447.041 | PHP13,411.23 |
| 600 - 870 | PHP433.63 | PHP13,008.90 |
| 900 + | PHP420.621 | PHP12,618.63 |
| *price indicative | ||
- RS Stock No.:
- 146-4234
- Mfr. Part No.:
- IXFH60N65X2
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
sdjkfsjkd | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Series | HiperFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 52 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 780 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Width | 5.21mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 108 nC @ 10 V |
| Length | 16.13mm |
| Forward Diode Voltage | 1.4V |
| Height | 21.34mm |
| Minimum Operating Temperature | -55 °C |