IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263 IXFA80N25X3
- RS Stock No.:
- 146-4231
- Mfr. Part No.:
- IXFA80N25X3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP23,613.80
(exc. VAT)
PHP26,447.45
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 200 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP472.276 | PHP23,613.80 |
| 100 - 200 | PHP461.609 | PHP23,080.45 |
| 250 - 450 | PHP446.684 | PHP22,334.20 |
| 500 - 950 | PHP424.348 | PHP21,217.40 |
| 1000 + | PHP387.237 | PHP19,361.85 |
*price indicative
- RS Stock No.:
- 146-4231
- Mfr. Part No.:
- IXFA80N25X3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | HiperFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 390W | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 11.05 mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series HiperFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 390W | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 11.05 mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Lowest on-resistance RDS(ON) and gate charge Qg
Fast soft recovery body diode dv/dt ruggedness
Superior avalanche capability
International standard packages
Battery chargers for light electric vehicles
Synchronous rectification in switching power supplies
Motor control
DC-DC converters
Uninterruptible power supplies
Electric forklifts
Class-D audio amplifiers
Telecom systems
High efficiency
High power density
Improved system reliability
Easy to design in
200 MHz/330 DMIPS, MIPS32 microAptiv core
Dual Panel Flash for live update support
12-bit, 18 MSPS, 45-channel ADC module
Memory Management Unit for optimum embedded OS execution
microMIPS mode for up to 35% code compression
CAN, UART, I2C, PMP, EBI, SQI & Analog Comparators
SPI/I2S interfaces for audio processing and playback
Hi-Speed USB Device/Host/OTG
10/100 Mbps Ethernet MAC with MII and RMII Interface
Advanced Memory Protection
2MB Flash memory (plus an additional 160 KB of Boot Flash)
640KB SRAM memory
Related links
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- IXYS HiperFET Type N-Channel MOSFET 250 V Enhancement, 4-Pin TO-220
- IXYS HiperFET Type N-Channel MOSFET 250 V Enhancement, 4-Pin TO-220 IXFP80N25X3
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-268
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247