ROHM SCT2H12NZ N-Channel MOSFET, 3.7 A, 1700 V Enhancement, 3-Pin TO-3PFM SCT2H12NZGC11
- RS Stock No.:
- 133-2860
- Mfr. Part No.:
- SCT2H12NZGC11
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
PHP1,050.32
(exc. VAT)
PHP1,176.36
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Last RS stock
- Plus 14 unit(s) shipping from September 28, 2026
- Final 64 unit(s) shipping from October 05, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP525.16 | PHP1,050.32 |
| 10 - 18 | PHP509.40 | PHP1,018.80 |
| 20 - 98 | PHP494.12 | PHP988.24 |
| 100 - 198 | PHP479.305 | PHP958.61 |
| 200 + | PHP464.925 | PHP929.85 |
*price indicative
- RS Stock No.:
- 133-2860
- Mfr. Part No.:
- SCT2H12NZGC11
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO-3PFM | |
| Series | SCT2H12NZ | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | 4.3V | |
| Maximum Gate Source Voltage Vgs | -6V, +22V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Width | 5mm | |
| Height | 21mm | |
| Length | 16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO-3PFM | ||
Series SCT2H12NZ | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf 4.3V | ||
Maximum Gate Source Voltage Vgs -6V, +22V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Width 5mm | ||
Height 21mm | ||
Length 16mm | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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