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    N-Channel MOSFET, 129 A, 135 V, 3-Pin D2PAK Infineon IRF135S203

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    Subtotal (1 pack of 2 units)**

    PHP341.04

    (exc. VAT)

    PHP381.96

    (inc. VAT)

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    794 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Pack**
    2 - 8PHP170.52PHP341.04
    10 - 98PHP165.395PHP330.79
    100 - 498PHP160.435PHP320.87
    500 - 998PHP155.62PHP311.24
    1000 +PHP150.945PHP301.89

    **price indicative

    Packaging Options:
    RS Stock No.:
    130-0937
    Mfr. Part No.:
    IRF135S203
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    129 A

    Maximum Drain Source Voltage

    135 V

    Package Type

    D2PAK (TO-263)

    Series

    HEXFET

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    8.4 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4V

    Minimum Gate Threshold Voltage

    2V

    Maximum Power Dissipation

    441 W

    Maximum Gate Source Voltage

    -20 V, +20 V

    Width

    4.83mm

    Number of Elements per Chip

    1

    Maximum Operating Temperature

    +175 °C

    Typical Gate Charge @ Vgs

    180 nC @ 10 V

    Length

    10.67mm

    Minimum Operating Temperature

    -55 °C

    Forward Diode Voltage

    1.3V

    Height

    9.65mm

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