N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1

RS Stock No.:: 130-0902
Mfr. Part No.:: IPD60R800CEAUMA1
Manufacturer:: Infineon

N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1

This image is representative of the product range

Subtotal (1 pack of 25 units)**

PHP936.00

(exc. VAT)

PHP1,048.25

(inc. VAT)

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Pack**
25 - 100	PHP37.44	PHP936.00
125 - 475	PHP36.317	PHP907.925
500 - 975	PHP34.138	PHP853.45
1000 - 2475	PHP31.065	PHP776.625
2500 +	PHP27.337	PHP683.425

**price indicative

RS Stock No.:: 130-0902
Mfr. Part No.:: IPD60R800CEAUMA1
Manufacturer:: Infineon

IPD60R800CE, IPA60R800CE, MOSFET 600V CoolMOS CE Power Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8.4 A
Maximum Drain Source Voltage	650 V
Series	CoolMOS™ CE
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	800 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	74 W
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	6.73mm
Typical Gate Charge @ Vgs	17.2 nC @ 10 V
Width	6.22mm
Forward Diode Voltage	0.9V
Minimum Operating Temperature	-40 °C
Height	2.41mm

N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1

FREE delivery for over PHP7,000.00 (ex VAT)

Infineon CoolMOS™ CE Power MOSFET

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