IXYS PolarHVTM HiPerFET Type N-Channel MOSFET, 70 A, 500 V Enhancement, 3-Pin ISOPLUS264 IXFL100N50P
- RS Stock No.:
- 125-8039
- Mfr. Part No.:
- IXFL100N50P
- Manufacturer:
- IXYS
This image is representative of the product range
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Subtotal (1 unit)*
PHP1,808.38
(exc. VAT)
PHP2,025.39
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 40 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 1 | PHP1,808.38 |
| 2 - 4 | PHP1,754.13 |
| 5 - 9 | PHP1,683.97 |
| 10 - 24 | PHP1,599.77 |
| 25 + | PHP1,503.78 |
*price indicative
- RS Stock No.:
- 125-8039
- Mfr. Part No.:
- IXFL100N50P
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | PolarHVTM HiPerFET | |
| Package Type | ISOPLUS264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 625W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.29mm | |
| Standards/Approvals | No | |
| Height | 26.42mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series PolarHVTM HiPerFET | ||
Package Type ISOPLUS264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 625W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 20.29mm | ||
Standards/Approvals No | ||
Height 26.42mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, IXYS HiperFET PolarHV Series
A range of IXYS PolarHV™ series N-channel Enhancement mode Power MOSFET with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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