Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-247 TK25N60X,S1F(S
- RS Stock No.:
- 125-0557P
- Mfr. Part No.:
- TK25N60X,S1F(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied in a tube)*
PHP1,632.95
(exc. VAT)
PHP1,828.90
(inc. VAT)
Stock information currently inaccessible
Units | Per Unit |
|---|---|
| 10 - 18 | PHP163.295 |
| 20 - 48 | PHP148.885 |
| 50 - 98 | PHP135.99 |
| 100 + | PHP125.88 |
*price indicative
- RS Stock No.:
- 125-0557P
- Mfr. Part No.:
- TK25N60X,S1F(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | DTMOSIV | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 180 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.02mm | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 15.94mm | |
| Height | 20.95mm | |
| Forward Diode Voltage | 1.7V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 600 V | ||
Series DTMOSIV | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 180 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Width 5.02mm | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 15.94mm | ||
Height 20.95mm | ||
Forward Diode Voltage 1.7V | ||
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