N-Channel MOSFET, 18.5 A, 500 V, 3-Pin TO-220SIS Toshiba TK19A50W,S5X(M
- RS Stock No.:
- 125-0547
- Mfr. Part No.:
- TK19A50W,S5X(M
- Manufacturer:
- Toshiba
10 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (In a Pack of 5)
PHP110.882
(exc. VAT)
PHP124.188
(inc. VAT)
| Units | Per Unit | Per Pack* |
| 5 - 20 | PHP110.882 | PHP554.41 |
| 25 - 45 | PHP107.556 | PHP537.78 |
| 50 - 120 | PHP104.33 | PHP521.65 |
| 125 - 245 | PHP101.20 | PHP506.00 |
| 250 + | PHP98.164 | PHP490.82 |
| *price indicative | ||
- RS Stock No.:
- 125-0547
- Mfr. Part No.:
- TK19A50W,S5X(M
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 18.5 A |
| Maximum Drain Source Voltage | 500 V |
| Series | DTMOSIV |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 40 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 4.5mm |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Transistor Material | Si |
| Length | 10mm |
| Forward Diode Voltage | 1.7V |
| Height | 15mm |