N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-247AC Infineon IRFP7430PBF
- RS Stock No.:
- 124-9048
- Mfr. Part No.:
- IRFP7430PBF
- Manufacturer:
- Infineon
425 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (In a Tube of 25)
PHP135.72
(exc. VAT)
PHP152.01
(inc. VAT)
| Units | Per Unit | Per Tube* |
| 25 - 25 | PHP135.72 | PHP3,393.00 |
| 50 - 100 | PHP131.649 | PHP3,291.225 |
| 125 - 225 | PHP127.699 | PHP3,192.475 |
| 250 - 475 | PHP123.868 | PHP3,096.70 |
| 500 + | PHP120.152 | PHP3,003.80 |
| *price indicative | ||
- RS Stock No.:
- 124-9048
- Mfr. Part No.:
- IRFP7430PBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 195 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | TO-247AC |
| Series | StrongIRFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.9V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 366 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Width | 5.31mm |
| Transistor Material | Si |
| Length | 15.87mm |
| Typical Gate Charge @ Vgs | 460 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 20.7mm |