ROHM UM6K33N Dual N-Channel MOSFET, 200 mA, 50 V, 6-Pin SOT-363 UM6K33NTN
- RS Stock No.:
- 124-6895
- Mfr. Part No.:
- UM6K33NTN
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 40 units)*
PHP480.80
(exc. VAT)
PHP538.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 280 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 40 - 160 | PHP12.02 | PHP480.80 |
| 200 - 360 | PHP10.824 | PHP432.96 |
| 400 - 960 | PHP9.844 | PHP393.76 |
| 1000 - 1960 | PHP9.022 | PHP360.88 |
| 2000 + | PHP8.331 | PHP333.24 |
*price indicative
- RS Stock No.:
- 124-6895
- Mfr. Part No.:
- UM6K33NTN
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-363 (SC-88) | |
| Series | UM6K33N | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 7.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 150 mW | |
| Transistor Configuration | Dual Base | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 2 | |
| Width | 1.35mm | |
| Length | 2.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.9mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-363 (SC-88) | ||
Series UM6K33N | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 7.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 150 mW | ||
Transistor Configuration Dual Base | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 2 | ||
Width 1.35mm | ||
Length 2.1mm | ||
Maximum Operating Temperature +150 °C | ||
Height 0.9mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Dual N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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