Vishay SF Series N channel-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-220AB SIHP110N65SF-GE3

N
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PHP315.78

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PHP353.67

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Units
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1 - 9PHP315.78
10 - 49PHP195.73
50 - 99PHP151.37
100 +PHP102.65

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RS Stock No.:
735-263
Mfr. Part No.:
SIHP110N65SF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220AB

Series

SF Series

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.115Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

313W

Typical Gate Charge Qg @ Vgs

83nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Power MOSFET is designed for efficient energy handling in Advanced electronic systems. with low effective capacitance, it minimizes switching and conduction losses, ensuring improved performance and reliability. its avalanche energy rating and eco-friendly compliance make it a robust and sustainable choice for modern applications.

Reduces switching and conduction losses for better performance

Offers avalanche energy rating for durability

Ensures low figure of merit for optimized design

Maintains RoHS compliance for environmental standards

Delivers halogen-free construction for safer usage

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