Vishay SIRA18DDP Type N-Channel Single MOSFETs, 40 A, 30 V Enhancement, 8-Pin PowerPAK SIRA18DDP-T1-GE3

N

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Subtotal (1 reel of 3000 units)*

PHP37,410.00

(exc. VAT)

PHP41,910.00

(inc. VAT)

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3000 +PHP12.47PHP37,410.00

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RS Stock No.:
653-181
Mfr. Part No.:
SIRA18DDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SIRA18DDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00683Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Power Dissipation Pd

17W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Width

6.15 mm

Standards/Approvals

No

Height

1.04mm

Automotive Standard

No

COO (Country of Origin):
TH
The Vishay N-channel MOSFET optimized for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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