Vishay SISS5208DN Type N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3

N

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Subtotal (1 reel of 3000 units)*

PHP135,969.00

(exc. VAT)

PHP152,286.00

(inc. VAT)

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3000 +PHP45.323PHP135,969.00

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RS Stock No.:
653-148
Mfr. Part No.:
SISS5208DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

172A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK

Series

SISS5208DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0013Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

56.8W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

24.6nC

Maximum Gate Source Voltage Vgs

7 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.40mm

Height

0.83mm

Width

3.40 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 20 V drain-source voltage. Packaged in PowerPAK 1212-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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