Vishay SIS9122 Dual N-Channel Single MOSFETs, 7.1 A, 100 V Enhancement, 8-Pin PowerPAK SIS9122DN-T1-GE3

N

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Subtotal (1 reel of 3000 units)*

PHP109,686.00

(exc. VAT)

PHP122,847.00

(inc. VAT)

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Per Reel*
3000 +PHP36.562PHP109,686.00

*price indicative

RS Stock No.:
653-097
Mfr. Part No.:
SIS9122DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Dual N

Maximum Continuous Drain Current Id

7.1A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK

Series

SIS9122

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.16Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

3.8nC

Maximum Power Dissipation Pd

17.8W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.3mm

Height

0.8mm

Width

3.3 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay automotive-grade dual N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK 1212-8 Dual, it utilizes TrenchFET Gen IV technology for optimized electrical and thermal performance.

Pb Free

Halogen free

RoHS compliant

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