Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- RS Stock No.:
- 598-498
- Mfr. Part No.:
- TP0604N3-G
- Manufacturer:
- Microchip
N
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Units | Per Unit | Per Bag* |
|---|---|---|
| 1000 + | PHP69.556 | PHP69,556.00 |
*price indicative
- RS Stock No.:
- 598-498
- Mfr. Part No.:
- TP0604N3-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.2mm | |
| Width | 4.2 mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel Vertical DMOS FET | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Length 4.2mm | ||
Width 4.2 mm | ||
Standards/Approvals RoHS Compliant | ||
Height 5.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Microchip P Channel Enhancement-Mode Vertical low-threshold transistor uses a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Related links
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