Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S10S1XTMA1
- RS Stock No.:
- 351-971
- Mfr. Part No.:
- IGC033S10S1XTMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
PHP589.80
(exc. VAT)
PHP660.58
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 4,860 unit(s) shipping from August 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 18 | PHP294.90 | PHP589.80 |
| 20 - 198 | PHP265.55 | PHP531.10 |
| 200 - 998 | PHP244.87 | PHP489.74 |
| 1000 - 1998 | PHP227.075 | PHP454.15 |
| 2000 + | PHP203.495 | PHP406.99 |
*price indicative
- RS Stock No.:
- 351-971
- Mfr. Part No.:
- IGC033S10S1XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IGC033 | |
| Package Type | PG-VSON-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IGC033 | ||
Package Type PG-VSON-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon IGC033 Series MOSFET, 100V Drain Source Voltage, 76A Continuous Drain Current - IGC033S10S1XTMA1
This MOSFET is a P-channel enhancement device designed for high-current switching in surface-mounted electronics. It operates across a wide temperature range and is suited to demanding thermal environments while providing low-resistance conduction for power management and conversion tasks.
Features and Benefits:
• 3.3mΩ drain-source resistance for minimal conduction loss
• 76A continuous drain current enabling heavy-load switching
• 100V drain-source rating for high-voltage applications
• 11nC typical gate charge for faster switching transitions
• 45W maximum power dissipation supporting elevated loads
• 5.5V maximum gate-source tolerance for low-voltage drive compatibility
• 76A continuous drain current enabling heavy-load switching
• 100V drain-source rating for high-voltage applications
• 11nC typical gate charge for faster switching transitions
• 45W maximum power dissipation supporting elevated loads
• 5.5V maximum gate-source tolerance for low-voltage drive compatibility
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for motor driver stages requiring high current
• Used for high-voltage load switching in industrial systems
• Can be used for server and telecoms power distribution
• Appropriate for compact surface-mount power modules
• Ideal for motor driver stages requiring high current
• Used for high-voltage load switching in industrial systems
• Can be used for server and telecoms power distribution
• Appropriate for compact surface-mount power modules
What package type should I plan for on my board?
It is supplied in a PG-VSON-6 surface-mount package requiring a six-pin footprint and thermal pad considerations to dissipate heat.
How does temperature range affect deployment choices?
With an operating range from -40 to 150°C it can be placed in environments with wide thermal variation, though layout must ensure sufficient thermal conduction to stay within dissipation limits.
What gate-drive levels are acceptable for switching?
Drive voltages must not exceed 5.5V between gate and source
typical low-voltage gate-drive circuits are appropriate given the modest gate charge.
Are there specific considerations for power dissipation management?
The 45W maximum requires adequate copper area or heatsinking on the PCB and consideration of duty cycle to prevent junction overheating.
Related links
- Infineon IGC033 Type P-Channel MOSFET 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101XTMA1
- Infineon CoolGaN Type P-Channel Single MOSFETs 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101
- Infineon CoolGaN Type P-Channel Single MOSFETs 100 V Enhancement, 6-Pin PG-TSON-6-2 IGC033S10S1
- Infineon TLE4972AE35S5XUMA1 PG-VSON-6
- Texas Instruments NexFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin VSONP CSD25402Q3A
- DiodesZetex DMP4011 Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI5060 DMP4011SPS-13
- DiodesZetex DMP4011 Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI5060
- Texas Instruments NexFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin VSONP
