Infineon Type N-Channel MOSFET, 280 A, 1200 V Enhancement FF3MR12KM1HPHPSA1
- RS Stock No.:
- 349-316
- Mfr. Part No.:
- FF3MR12KM1HPHPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
PHP47,701.03
(exc. VAT)
PHP53,425.15
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 8 unit(s) shipping from January 19, 2026
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Units | Per Unit |
|---|---|
| 1 + | PHP47,701.03 |
*price indicative
- RS Stock No.:
- 349-316
- Mfr. Part No.:
- FF3MR12KM1HPHPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 6.32mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.59V | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 60749, 60068, IEC 60747 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 6.32mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.59V | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 60749, 60068, IEC 60747 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- HU
The Infineon 62 mm CoolSiC MOSFET Half-Bridge Module is designed in the well-known 62 mm housing, integrating M1H chip technology for high performance power applications. This module offers high current density, making it ideal for space-constrained systems that require robust performance. With low switching losses, it ensures greater efficiency at high switching frequencies. The superior gate oxide reliability enhances durability, extending the module’s operational life in demanding conditions.
Minimizes cooling efforts
Reduction in volume and size
Reduced system costs
Symmetrical module design
Standard construction technique
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