STMicroelectronics PD5 Type N-Channel MOSFET, 2.5 A, 65 V Enhancement, 10-Pin PowerSO-10RF PD57018-E
- RS Stock No.:
- 330-355
- Mfr. Part No.:
- PD57018-E
- Manufacturer:
- STMicroelectronics
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP3,255.42 |
| 10 - 99 | PHP2,929.88 |
| 100 + | PHP2,702.08 |
*price indicative
- RS Stock No.:
- 330-355
- Mfr. Part No.:
- PD57018-E
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 65V | |
| Package Type | PowerSO-10RF | |
| Series | PD5 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 0.76Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 65°C | |
| Maximum Power Dissipation Pd | 31.7W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 165°C | |
| Standards/Approvals | J-STD-020B | |
| Height | 3.6mm | |
| Length | 14.35mm | |
| Width | 9.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 65V | ||
Package Type PowerSO-10RF | ||
Series PD5 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 0.76Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 65°C | ||
Maximum Power Dissipation Pd 31.7W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 165°C | ||
Standards/Approvals J-STD-020B | ||
Height 3.6mm | ||
Length 14.35mm | ||
Width 9.6 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The STMicroelectronics RF POWER transistor is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
Excellent thermal stability
Common source configuration
New RF plastic package
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