Infineon HEXFET Type P-Channel MOSFET, 760 mA, 30 V Enhancement, 3-Pin SOT-23 IRLML5103TRPBF
- RS Stock No.:
- 302-038
- Distrelec Article No.:
- 304-36-996
- Mfr. Part No.:
- IRLML5103TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 pack of 5 units)*
PHP96.43
(exc. VAT)
PHP108.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
- Plus 20 left, shipping from August 31, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP19.286 | PHP96.43 |
| 25 - 95 | PHP18.708 | PHP93.54 |
| 100 - 245 | PHP18.146 | PHP90.73 |
| 250 - 495 | PHP17.604 | PHP88.02 |
| 500 + | PHP17.076 | PHP85.38 |
*price indicative
- RS Stock No.:
- 302-038
- Distrelec Article No.:
- 304-36-996
- Mfr. Part No.:
- IRLML5103TRPBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 760mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.4nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 540mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 760mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.4nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 540mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 760mA Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML5103TRPBF
Features & Benefits
Applications
How does the MOSFET perform in high-temperature environments?
What is the significance of the low Rds(on) value?
Can this MOSFET be used in compact designs?
What is the maximum gate-source voltage this device can handle?
How should the installation be approached for optimal performance?
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