Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1
- RS Stock No.:
- 284-943
- Mfr. Part No.:
- IQDH35N03LM5CGATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 284-943
- Mfr. Part No.:
- IQDH35N03LM5CGATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 789A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 789A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor exemplifies cutting edge technology in MOSFET performance, designed primarily for high efficiency switching applications. This transistor operates at a voltage of 25V and is tailored for unparalleled thermal management and low on resistance, ensuring superior efficiency in demanding environments. Manufactured with Advanced materials and adhering to the highest industry standards, it stands out for its capability to handle high current loads while maintaining low energy loss. The unique design supports robust thermal resistance, facilitating effective heat dissipation, even in Compact layouts.
N channel technology for fast switching
Low on resistance reduces energy losses
Superior thermal resistance for reliability
Fully qualified for industrial durability
Avalanche tested for consistent performance
Pb free plating supports sustainability
Halogen free construction meets safety standards
Compact design for easy integration
Related links
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
