Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1
- RS Stock No.:
- 284-929
- Mfr. Part No.:
- IQD009N06NM5CGATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP546.35
(exc. VAT)
PHP611.912
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 18 | PHP273.175 | PHP546.35 |
| 20 - 198 | PHP245.685 | PHP491.37 |
| 200 - 998 | PHP226.92 | PHP453.84 |
| 1000 - 1998 | PHP210.335 | PHP420.67 |
| 2000 + | PHP188.515 | PHP377.03 |
*price indicative
- RS Stock No.:
- 284-929
- Mfr. Part No.:
- IQD009N06NM5CGATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 445A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 333W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 445A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 333W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for high efficiency performance in various applications, providing stable operation at a maximum voltage of 60V. This N channel MOSFET features a low on resistance, which significantly reduces power losses, ensuring that your designs maintain optimal thermal management even under challenging conditions. With Advanced avalanche characteristics and extensive testing for reliability, this device caters to industrial applications demanding superior thermal resistance and robust performance. The Compact PG TTFN 9 packaging enhances ease of integration into existing designs, making it a go to choice for engineers looking to enhance their systems.
Very low on resistance improves efficiency
Enhanced thermal resistance for performance
Optimised for continuous and pulsed currents
Comprehensive avalanche ratings for durability
RoHS and halogen free compliant
Fully qualified per JEDEC standards
Significant savings on power dissipation
Flexible temperature range for diverse environments
Related links
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1