onsemi NXH800H120L7QDSG, Type N, Type P-Channel Half Bridge IGBT Power Module, 800 A 1200 V, 11-Pin PIM11, Through Hole
- RS Stock No.:
- 277-059
- Mfr. Part No.:
- NXH800H120L7QDSG
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
PHP19,024.55
(exc. VAT)
PHP21,307.50
(inc. VAT)
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In Stock
- 24 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 + | PHP19,024.55 |
*price indicative
- RS Stock No.:
- 277-059
- Mfr. Part No.:
- NXH800H120L7QDSG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 800A | |
| Product Type | IGBT Power Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Package Type | PIM11 | |
| Configuration | Half Bridge | |
| Mount Type | Through Hole | |
| Channel Type | Type N, Type P | |
| Pin Count | 11 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 152mm | |
| Width | 62.15 mm | |
| Standards/Approvals | RoHS | |
| Height | 20.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 800A | ||
Product Type IGBT Power Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Package Type PIM11 | ||
Configuration Half Bridge | ||
Mount Type Through Hole | ||
Channel Type Type N, Type P | ||
Pin Count 11 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 152mm | ||
Width 62.15 mm | ||
Standards/Approvals RoHS | ||
Height 20.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Half Bridge IGBT Power Module features integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes, providing lower conduction and switching losses. This design enables high efficiency and superior reliability. The module is configured as a 1200V, 800A 2-in-1 half-bridge, making it Ideal for applications that require robust performance and optimal power conversion efficiency.
NTC thermistor
Isolated base plate
Solderable pins
Low inductive layout
Pb free