Nexperia PSM Type N-Channel MOSFET, 300 A, 25 V Enhancement, 5-Pin LFPAK PSMN0R9-25YLDX
- RS Stock No.:
- 219-307
- Mfr. Part No.:
- PSMN0R9-25YLDX
- Manufacturer:
- Nexperia
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Subtotal (1 tape of 1 unit)*
PHP131.79
(exc. VAT)
PHP147.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,500 unit(s) ready to ship from another location
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | PHP131.79 |
| 10 - 99 | PHP118.70 |
| 100 - 499 | PHP109.10 |
| 500 - 999 | PHP101.24 |
| 1000 + | PHP90.77 |
*price indicative
- RS Stock No.:
- 219-307
- Mfr. Part No.:
- PSMN0R9-25YLDX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 238W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 47.2nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 238W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 47.2nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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