Nexperia NextPower-S3 Schottky-Plus Type N-Channel MOSFET, 240 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YSHX
- RS Stock No.:
- 219-293
- Mfr. Part No.:
- PSMN1R4-40YSHX
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 1 unit)*
PHP143.13
(exc. VAT)
PHP160.31
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 1,500 unit(s), ready to ship from another location
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | PHP143.13 |
| 10 - 99 | PHP129.17 |
| 100 - 499 | PHP118.70 |
| 500 - 999 | PHP109.97 |
| 1000 + | PHP98.62 |
*price indicative
- RS Stock No.:
- 219-293
- Mfr. Part No.:
- PSMN1R4-40YSHX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 240A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NextPower-S3 Schottky-Plus | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 96nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 240A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NextPower-S3 Schottky-Plus | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 96nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control and battery protection. It offers high efficiency and reliable performance across a wide range of power management tasks.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
Related links
- Nexperia NextPower-S3 Schottky-Plus Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YSHX
- Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK
- Nexperia NextPower-S3 technology Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YLDX
- Nexperia NextPowerS3 Technology Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN1R4-30YLDX
- Nexperia NextPower Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN012-100YSFX
- Nexperia NextPower Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN015-100YSFX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R5-40YSDX
- Nexperia PSM Type N-Channel MOSFET 80 V Enhancement, 5-Pin LFPAK PSMN2R3-80SSFJ
