STMicroelectronics SCT N-Channel MOSFET, 29 A, 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT015W120G3-4AG
- RS Stock No.:
- 215-222
- Mfr. Part No.:
- SCT015W120G3-4AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Subtotal (1 tube of 30 units)*
PHP116,744.67
(exc. VAT)
PHP130,754.04
(inc. VAT)
FREE delivery for orders over ₱5,000.00
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- Shipping from July 05, 2027
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 + | PHP3,891.489 | PHP116,744.67 |
*price indicative
- RS Stock No.:
- 215-222
- Mfr. Part No.:
- SCT015W120G3-4AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247-4 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 673W | |
| Typical Gate Charge Qg @ Vgs | 167nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 4.2V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247-4 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 673W | ||
Typical Gate Charge Qg @ Vgs 167nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 4.2V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
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