IXYS HiperFET, Polar Type N-Channel MOSFET, 120 A, 200 V Enhancement, 3-Pin TO-247

This image is representative of the product range

Bulk discount available

Subtotal 10 units (supplied in a tube)*

PHP7,429.50

(exc. VAT)

PHP8,321.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 19 unit(s) shipping from March 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
10 - 49PHP742.95
50 - 99PHP720.68
100 - 249PHP699.05
250 +PHP678.09

*price indicative

Packaging Options:
RS Stock No.:
193-458P
Mfr. Part No.:
IXFH120N20P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-247

Series

HiperFET, Polar

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

714W

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

152nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

21.46mm

Length

16.26mm

Width

5.3 mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links