STMicroelectronics STripFET F6 Type P-Channel MOSFET, 35 A, 60 V Enhancement, 3-Pin TO-252 STD35P6LLF6

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Subtotal (1 reel of 2500 units)*

PHP140,260.00

(exc. VAT)

PHP157,090.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2500 +PHP56.104PHP140,260.00

*price indicative

RS Stock No.:
151-911
Mfr. Part No.:
STD35P6LLF6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

60V

Series

STripFET F6

Package Type

TO-252

Pin Count

3

Maximum Drain Source Resistance Rds

0.028Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

70W

Typical Gate Charge Qg @ Vgs

30nC

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics P-channel Power MOSFET, developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

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