STMicroelectronics SuperMESH Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252 STD4NK80ZT4

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PHP1,281.28

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PHP1,435.04

(inc. VAT)

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Units
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20 - 180PHP64.064PHP1,281.28
200 - 480PHP60.863PHP1,217.26
500 - 980PHP56.339PHP1,126.78
1000 - 1980PHP51.89PHP1,037.80
2000 +PHP49.939PHP998.78

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Packaging Options:
RS Stock No.:
151-900
Mfr. Part No.:
STD4NK80ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

800V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

22.5nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

2.4mm

Length

10.1mm

Width

6.6 mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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