SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D

RS Stock No.:: 904-7345P
Mfr. Part No.:: C2M1000170D
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D

This image is representative of the product range

260 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

Added

Price Each (Supplied in a Tube)

PHP567.80

(exc. VAT)

PHP635.94

(inc. VAT)

Units	Per Unit
10 - 49	PHP567.80
50 - 99	PHP560.37
100 - 249	PHP553.15
250 +	PHP546.12

RS Stock No.:: 904-7345P
Mfr. Part No.:: C2M1000170D
Manufacturer:: Wolfspeed

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5 A
Maximum Drain Source Voltage	1700 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.1V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	69 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-5 V, +20 V
Width	5.21mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	13 nC @ 20 V, 13 nC @ 5 V
Number of Elements per Chip	1
Transistor Material	SiC
Length	16.13mm
Height	21.1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	3.8V