Infineon IGW15T120FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 4 units)*

PHP1,085.412

(exc. VAT)

PHP1,215.66

(inc. VAT)

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Units
Per Unit
Per Pack*
4 - 36PHP271.353PHP1,085.41
40 - 196PHP263.21PHP1,052.84
200 - 396PHP255.318PHP1,021.27
400 - 996PHP247.66PHP990.64
1000 +PHP240.228PHP960.91

*price indicative

Packaging Options:
RS Stock No.:
914-0211
Mfr. Part No.:
IGW15T120FKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

110 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Maximum Operating Temperature

+150 °C

Energy Rating

4.1mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

1100pF

Infineon TrenchStop IGBT Transistors, 1100 to 1600V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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