STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 906-2808
- Mfr. Part No.:
- STGP5H60DF
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 10 units)*
PHP556.64
(exc. VAT)
PHP623.44
(inc. VAT)
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In Stock
- Plus 110 unit(s) shipping from December 15, 2025
- Plus 90 unit(s) shipping from December 22, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP55.664 | PHP556.64 |
| 100 - 490 | PHP53.993 | PHP539.93 |
| 500 - 990 | PHP52.373 | PHP523.73 |
| 1000 - 1990 | PHP50.801 | PHP508.01 |
| 2000 + | PHP49.277 | PHP492.77 |
*price indicative
- RS Stock No.:
- 906-2808
- Mfr. Part No.:
- STGP5H60DF
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 10 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 88 W | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 15.75mm | |
| Gate Capacitance | 855pF | |
| Energy Rating | 221mJ | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 10 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 88 W | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 15.75mm | ||
Gate Capacitance 855pF | ||
Energy Rating 221mJ | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.