Infineon IRG8P25N120KDPBF IGBT, 40 A 1200 V, 3-Pin TO-247AC, Through Hole

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Subtotal 10 units (supplied in a tube)*

PHP2,415.90

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PHP2,705.80

(inc. VAT)

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Per Unit
10 - 49PHP241.59
50 - 99PHP239.04
100 - 249PHP236.46
250 +PHP233.86

*price indicative

Packaging Options:
RS Stock No.:
879-3397P
Mfr. Part No.:
IRG8P25N120KDPBF
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

180 W

Package Type

TO-247AC

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

8 → 30kHz

Transistor Configuration

Single

Dimensions

15.87 x 5.31 x 20.7mm

Maximum Operating Temperature

+150 °C

Energy Rating

0.7mJ

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
MX

Single IGBT over 21A, Infineon


Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's


IGBT Transistors, International Rectifier


International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.