STMicroelectronics, N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface

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Subtotal 25 units (supplied on a continuous strip)*

PHP3,722.65

(exc. VAT)

PHP4,169.38

(inc. VAT)

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  • Shipping from February 08, 2027
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Units
Per Unit
25 - 95PHP148.906
100 - 245PHP144.438
250 - 495PHP140.106
500 +PHP135.902

*price indicative

Packaging Options:
RS Stock No.:
877-2879P
Mfr. Part No.:
STGD5NB120SZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

5A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

75W

Package Type

TO-252

Mount Type

Surface

Channel Type

N

Pin Count

3

Switching Speed

690ns

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC JESD97, ECOPACK

Width

6.4mm

Series

H

Height

2.2mm

Length

6.2mm

Automotive Standard

No

Energy Rating

12.68mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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