- RS Stock No.:
- 838-6961
- Mfr. Part No.:
- F3L75R07W2E3B11BOMA1
- Manufacturer:
- Infineon
35 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each
PHP3,472.56
(exc. VAT)
PHP3,889.27
(inc. VAT)
Units | Per Unit |
1 - 9 | PHP3,472.56 |
10 - 49 | PHP3,426.86 |
50 - 99 | PHP3,382.35 |
100 - 249 | PHP3,338.98 |
250 + | PHP3,296.75 |
- RS Stock No.:
- 838-6961
- Mfr. Part No.:
- F3L75R07W2E3B11BOMA1
- Manufacturer:
- Infineon
Legislation and Compliance
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 95 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 250 W |
Configuration | Series |
Package Type | EASY2B |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 27 |
Switching Speed | 1MHz |
Transistor Configuration | Series |
Dimensions | 56.7 x 48 x 12mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |