STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount

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PHP701.10

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PHP785.25

(inc. VAT)

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25 - 45PHP135.50PHP677.50
50 - 245PHP130.806PHP654.03
250 - 495PHP125.224PHP626.12
500 +PHP120.514PHP602.57

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Packaging Options:
RS Stock No.:
810-3485
Mfr. Part No.:
STGB18N40LZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

420 V

Maximum Gate Emitter Voltage

16V

Maximum Power Dissipation

150 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 9.35 x 4.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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