Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

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Subtotal 10 units (supplied in a bag)*

PHP2,918.10

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PHP3,268.30

(inc. VAT)

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10 - 49PHP291.81
50 - 99PHP283.06
100 - 249PHP274.54
250 +PHP266.29

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Packaging Options:
RS Stock No.:
796-5058P
Mfr. Part No.:
GT30J121
Manufacturer:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

170 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.9 x 4.8 x 20mm

Maximum Operating Temperature

+150 °C

IGBT Discretes, Toshiba


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IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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